Atomic layer deposition of Y2O3 films using a novel liquid homoleptic yttrium precursor tris(sec-butylcyclopentadienyl)yttrium [Y(sBuCp)3] and water-Reference-Cited by-同舟云学术

Atomic layer deposition of Y₂O₃ films using a novel liquid homoleptic yttrium precursor tris(sec-butylcyclopentadienyl)yttrium [Y(^sBuCp)₃] and water

Published:2023 Issue:39 Volume:13 Page:27255-27261
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nishida Akihiro¹²^ORCID,Katayama Tsukasa³⁴,Matsuo Yasutaka³

Affiliation:

1. Graduate School of Chemical Sciences and Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan

2. Semiconductor Materials Department, Electronic Materials Development Laboratory, ADEKA CORPORATION, 7-2-34 Higashiogu, Arakawa-ku, Tokyo 116-8553, Japan

3. Research Institute for Electronic Science (RIES), Hokkaido University, N21W10, Sapporo 001-0021, Japan

4. JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan

Abstract

Atomic layer deposition of Y2O3 films was demonstrated using a novel liquid homoleptic yttrium precursor Y(sBuCp)3 and water. The deposited Y2O3 films exhibit high purity, high crystallinity, a smooth surface, and high electronic performance.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA05217F

Reference29 articles.

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