A 3D multistage information encryption platform with self-erasure function based on a synergistically shape-deformable and AIE fluorescence-tunable hydrogel-Reference-Cited by-同舟云学术

A 3D multistage information encryption platform with self-erasure function based on a synergistically shape-deformable and AIE fluorescence-tunable hydrogel

Published:2023 Issue:7 Volume:10 Page:2496-2505
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Yang Caixia¹²³,Xiao Hangxiang³,Tang Li¹^ORCID,Luo Zichen³,Luo Ying³,Zhou Ningbo³⁴,Liang Enxiang³⁴^ORCID,Wang Guoxiang³⁴,Tang Jianxin¹

Affiliation:

1. Hunan Key Laboratory of Biomedical Nanomaterials and Devices, College of Life Sciences and Chemistry, Hunan University of Technology, Zhuzhou, 412007, P. R. China

2. College of Packaging and Material Engineering, Hunan University of Technology, Zhuzhou, 412007, P. R. China

3. College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, Hunan Province, 414006, P. R. China

4. Key Laboratory of Hunan Province for Advanced Carbon-based Functional Materials, School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414006, P. R. China

Abstract

A facile strategy to fabricate an advanced AIE fluorescence-based information encryption platform with self-erasure ability by combining the shape and fluorescence change of the TPE3N3+-hydrogel/PAA-hydrogel bilayer hydrogel was demonstrated.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH00206C

Reference39 articles.

1. Smart responsive phosphorescent materials for data recording and security protection

2. A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances