Observation, morphology evolution and elimination of Cd inclusions in indium-doped CdZnTe single crystals
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2013/CE/C3CE00033H
Reference20 articles.
1. Cadmium zinc telluride and its use as a nuclear radiation detector material
2. Correlation between Ingot Diameter and Crystal Properties of CdZnTe:In Grown by the Modified Bridgman Method
3. Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal
4. Improvement of the quality of indium-doped CdZnTe single crystals by post-growth annealing for radiation detectors
5. Investigation of CdZnTe crystal defects using scanning probe microscopy
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1. Types and origin of surface defects induced by post-growth annealing of CdZnTe and CdMnTe crystals;Vacuum;2022-12
2. Stresses caused by Cd and Te inclusions in CdMnTe crystals and their impact on charge carrier transport;Journal of Alloys and Compounds;2021-09
3. Growth and characterization of inclusion-free CdMgTe single crystals using modified Bridgman method;Journal of Materials Science: Materials in Electronics;2020-05-13
4. Electric field distribution around cadmium and tellurium inclusions within CdTe-based compounds;Journal of Crystal Growth;2020-03
5. Relationship of the shape and size between etch pits and corresponding Te inclusions in CdZnTe crystals;Journal of Crystal Growth;2019-04
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