Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy-Reference-Cited by-同舟云学术

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Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

Published:2012 Issue:9 Volume:27 Page:1432
ISSN:0267-9477
Container-title:Journal of Analytical Atomic Spectrometry
language:en
Short-container-title:J. Anal. At. Spectrom.

Author:

Hönicke P.,Kayser Y.,Beckhoff B.,Müller M.,Dousse J.-Cl.,Hoszowska J.,Nowak S. H.

Publisher

Royal Society of Chemistry (RSC)

Subject

Spectroscopy,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2012/JA/C2JA10385K

Reference39 articles.

1. An (un)solvable problem in SIMS: B-interfacial profiling

2. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect

3. SIMS backside depth profiling of ultra shallow implants

4. Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si

5. Grazing incidence X-ray fluorescence analysis

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