Electrochemical Ostwald ripening and surface diffusion in the galvanic displacement reaction: control over particle growth
Author:
Affiliation:
1. Surface Physics and Material Science Division
2. Saha Institute of Nuclear Physics
3. Kolkata-700064
4. India
5. Variable Energy Cyclotron Centre
6. Kolkata 700064
Abstract
We could control the particle growth in the galvanic displacement reaction on amorphous Ge substrate by introducing reduced electron mobility and surface defects over crystalline Ge, where electrochemical Ostwald ripening has been observed.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA20297C
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