High-<i>k</i> BaTiO<sub>3</sub> nanoparticle films as gate dielectrics for flexible field effect transistors-Reference-Cited by-同舟云学术

High-k BaTiO₃ nanoparticle films as gate dielectrics for flexible field effect transistors

Published:2022 Issue:16 Volume:3 Page:6474-6484
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Parizi Saman Salemizadeh¹²,Caruntu Daniela¹³,Rotaru Aurelian³,Caruntu Gabriel¹²³^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, Central Michigan University, Mt. Pleasant, Michigan 48859, USA

2. The Science of Advanced Materials (SAM) Program, Central Michigan University, Mt. Pleasant, Michigan 48859, USA

3. Department of Electrical Engineering and Computer Science and MANSID Research Center, “Stefan Cel Mare” University, 13, Universitatii St., Suceava, 720229, Romania

Abstract

Highly uniform dielectric and semiconductor layers were incorporated from nanoparticle inks into flexible transparent field-effect transistors (FETs). The FETs showed superior performance characteristics, being promising for the development of silicon-free based electronics.

Funder

Central Michigan University

Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00186A

Reference43 articles.

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5. Artificial Skin Perception