Pressure-driven switching of magnetism in layered CrCl3

Author:

Ahmad Azkar Saeed1234ORCID,Liang Yongcheng56789ORCID,Dong Mingdong1234,Zhou Xuefeng1234,Fang Leiming101112134,Xia Yuanhua101112134,Dai Jianhong123414,Yan Xiaozhi1234,Yu Xiaohui141516174,Dai Junfeng1234,Zhang Guo-jun56789,Zhang Wenqing1234,Zhao Yusheng1234ORCID,Wang Shanmin1234

Affiliation:

1. Department of Physics and Shenzhen Engineering Research Center for Frontier Materials Synthesis at High Pressure

2. Southern University of Science and Technology

3. Shenzhen 518055

4. China

5. College of Science

6. Institute of Functional Materials

7. and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials

8. Donghua University

9. Shanghai 201620

10. Key Laboratory for Neutron Physics

11. Institute of Nuclear Physics and Chemistry

12. China Academy of Engineering Physics

13. Mianyang 621999

14. Key Laboratory of Extreme Conditions Physics

15. Institute of Physics

16. Chinese Academy of Sciences

17. Beijing 100190

Abstract

Pressure-induced switching of magnetism from FM to AFM phase has been observed in layered CrCl3. Concurrently, pressure-induced isostructural transition accompanied with an unusual semiconductor-to-semiconductor transition has been reported.

Funder

Shenzhen Peacock Plan

Guangdong Province Introduction of Innovative R&D Team

Development and Reform Commission of Shenzhen Municipality

National Natural Science Foundation of China

Science Challenge Project

Southern University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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