Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution-Reference-Cited by-同舟云学术

Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution

Published:2019 Issue:37 Volume:21 Page:21070-21083
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Bafekry Asadollah¹²³⁴¹^ORCID,Farjami Shayesteh Saber¹²³⁴^ORCID,Peeters Francois M.¹⁵⁶⁷

Affiliation:

1. Department of Physics

2. University of Guilan

3. 41335-1914 Rasht

4. Iran

5. University of Antwerp

6. B-2020 Antwerp

7. Belgium

Abstract

Using first-principles calculations the effects of topological defects, vacancies, Stone–Wales and anti-site and substitution of atoms, on the structure and electronic properties of monolayer C₃N are investigated.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP03853A

Reference79 articles.

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5. C3N Monolayer: Exploring the Emerging of Novel Electronic and Magnetic Properties with Adatom Adsorption, Functionalizations, Electric Field, Charging, and Strain

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