Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol

Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

Published:2018 Issue:68 Volume:8 Page:39115-39119
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Seon Jong-Baek¹²³⁴⁵,Cho Nam-Kwang¹²³⁴⁵^ORCID,Yoo Gayeong¹²³⁴⁵,Kim Youn Sang¹²³⁴⁵^ORCID,Char Kookheon⁶³⁴⁵^ORCID

Affiliation:

1. Program in Nano Science and Technology

2. Graduate School of Convergence Science and Technology

3. Seoul National University

4. Seoul 08826

5. Republic of Korea

6. School of Chemical & Biological Engineering

Abstract

Solution-processed amorphous zirconium oxide (ZrO₂) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO₂ films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA06911E

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