Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires
Author:
Affiliation:
1. TU Wien
2. Institute of Solid State Electronics
3. 1040 Vienna
4. Austria
5. Institute of Materials Chemistry
6. 1060 Vienna
Abstract
Electrical characterization of Ge0.81Sn0.19 nanowires has been performed revealing high electrical conductivity and semiconductor behaviour when cooled to 10 K. The impact on slightly elevated temperatures on the device stability of this metastable material is described.
Funder
Austrian Science Fund
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR05296D
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