A high-performance broadband phototransistor array of a PdSe<sub>2</sub>/SOI Schottky junction-Reference-Cited by-同舟云学术

A high-performance broadband phototransistor array of a PdSe₂/SOI Schottky junction

Published:2024 Issue:12 Volume:16 Page:6078-6086
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Yexin¹,Zhu Qinghai¹,Sun Jiabao²,Sun Yijun²^ORCID,Hanagata Nobutaka³^ORCID,Xu Mingsheng¹^ORCID

Affiliation:

1. College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China

2. College of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China

3. Research Center for Functional Materials and Nanotechnology Innovation Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Abstract

We demonstrate a phototransistor based on a PdSe2/Si heterojunction on a SOI substrate, which exhibits high photoelectric performance. The photoelectric performance of the device can be further improved under gate voltage regulation.

Funder

National Basic Research Program of China

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR06643F

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