Spectromicroscopy and imaging of photoexcited electron dynamics at in-plane silicon pn junctions-Reference-Cited by-同舟云学术

Spectromicroscopy and imaging of photoexcited electron dynamics at in-plane silicon pn junctions

Published:2021 Issue:4 Volume:13 Page:2626-2631
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hu Aiqin¹²³⁴⁵,Liu Wei¹²³⁴⁵,Li Xiaofang¹²³⁴⁵,Xu Shengnan⁶⁷⁸⁹¹⁰,Li Yaolong¹²³⁴⁵,Xue Zhaohang¹²³⁴⁵,Tang Jinglin¹²³⁴⁵,Ye Lulu¹²³⁴⁵,Yang Hong¹²³⁴⁵,Li Ming¹¹⁵¹²¹⁰,Ye Yu¹²³⁴⁵^ORCID,Sun Quan¹³¹⁴¹⁰^ORCID,Gong Qihuang¹²³⁴⁵,Lu Guowei¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory for Mesoscopic Physics

2. Collaborative Innovation Center of Quantum Matter

3. Nano-optoelectronics Frontier Center of the Ministry of Education

4. School of Physics

5. Peking University

6. State Key Laboratory of Low Dimensional Quantum Physics

7. Department of Physics

8. Tsinghua University

9. Beijing 100084

10. China

11. Institute of Microelectronics

12. Beijing 100871

13. Peking University Yangtze Delta Institute of Optoelectronics

14. Nantong 226010

Abstract

Revealing the influence of doping patterns on the photoelectron spectra and dynamics at in-plane silicon PN junctions using a time-resolved photoemission electron microscope.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR07954E

Reference41 articles.

1. Photocarrier Transfer across Monolayer MoS2–MoSe2 Lateral Heterojunctions

2. Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide