Effects of Se substitution and transition metal doping on the electronic and magnetic properties of a MoSxSe2−x/h-BN heterostructure-Reference-Cited by-同舟云学术

Effects of Se substitution and transition metal doping on the electronic and magnetic properties of a MoSxSe2−x/h-BN heterostructure

Published:2019 Issue:36 Volume:21 Page:20073-20082
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yu Fei-Fei¹²³⁴,Ke Sha-Sha¹²³⁴,Guan Shan-Shan¹²³⁴,Deng Hong-Xiang¹²³⁴,Guo Yong⁵⁶⁷⁴,Lü Hai-Feng¹²³⁴⁵

Affiliation:

1. School of Physics

2. University of Electronic Science and Technology of China

3. Chengdu 610054

4. China

5. Department of Physics

6. Tsinghua University

7. Beijing 100084

Abstract

The van der Waals heterostructures created by stacking two monolayer semiconductors have been rapidly developed experimentally and exhibit various unique physical properties.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

State Key Laboratory of Low-Dimensional Quantum Physics

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP03580J

Reference73 articles.

1. Van der Waals materials integrated nanophotonic devices [Invited]

2. Luminescence in 2D Materials and van der Waals Heterostructures

3. A first-principles study on alkaline earth metal atom substituted monolayer boron nitride (BN)

4. Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure

5. Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

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