Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS<sub>2</sub>/Janus MoSSe van der Waals heterostructure-Reference-Cited by-同舟云学术

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS₂/Janus MoSSe van der Waals heterostructure

Published:2024 Issue:4 Volume:6 Page:1193-1201
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Nha P. H.¹,Nguyen Chuong V.²,Hieu Nguyen N.³⁴^ORCID,Phuc Huynh V.⁵^ORCID,Nguyen Cuong Q.³⁴^ORCID

Affiliation:

1. Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam

2. Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi, Vietnam

3. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

4. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

5. Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam

Abstract

The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NA/D3NA00852E

Reference70 articles.

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3. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

4. Electric Field Effect in Atomically Thin Carbon Films

5. 2D transition metal dichalcogenides

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