Edge contacts accelerate the response of MoS<sub>2</sub> photodetectors-Reference-Cited by-同舟云学术

Edge contacts accelerate the response of MoS₂ photodetectors

Published:2023 Issue:13 Volume:5 Page:3494-3499
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Strauß Fabian¹²,Schedel Christine¹,Scheele Marcus¹²^ORCID

Affiliation:

1. Institute of Physical and Theoretical Chemistry, University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany

2. LISA+, University of Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany

Abstract

Edge contacts are compared to top contacts in terms of the photocurrent response of MoS2 multilayers. The faster response of the edge contacts is attributed to the predominantly in-plane direction of charge carrier diffusion.

Funder

Deutsche Forschungsgemeinschaft

FP7 Ideas: European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D3NA00223C

Reference46 articles.

1. Single-layer MoS2 transistors

2. Enhanced Electrical Properties of Lithography-Free Fabricated MoS2 Field Effect Transistors with Chromium Contacts

3. Electroluminescence in Single Layer MoS2

4. Single-Layer MoS2 Phototransistors

5. Emerging photonic architectures in two-dimensional opto-electronics

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