The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI<sub>3</sub>/GaN interface-Reference-Cited by-同舟云学术

The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI₃/GaN interface

Published:2023 Issue:24 Volume:25 Page:16492-16498
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zdanowicz Ewelina¹^ORCID,Herman Artur P.¹^ORCID,Przypis Łukasz¹²^ORCID,Opołczyńska Katarzyna³⁴^ORCID,Serafińczuk Jarosław⁵³,Chlipała Mikołaj⁶,Skierbiszewski Czesław⁶,Kudrawiec Robert¹

Affiliation:

1. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, Wrocław 50-370, Poland

2. Saule Research Institute, Duńska 11, Wrocław 54-427, Poland

3. Łukasiewicz Research Network PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland

4. Institute of Experimental Physics, University of Wrocław, Max Born Square 9, Wrocław 50-204, Poland

5. Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, Wrocław 50-372, Poland

6. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, Warszawa 01-142, Poland

Abstract

The direction of carrier transfer through MAPbI3/GaN interface depends on Fermi level pinning at GaN surface.

Funder

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP00801K

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4. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

5. Nanoporous GaN/n-type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells