High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires-Reference-Cited by-同舟云学术

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High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires

Published:2012 Issue:8 Volume:4 Page:2571
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dong Haibo,Zhang Xiaoxian,Zhao Duan,Niu Zhiqiang,Zeng Qingsheng,Li Jinzhu,Cai Le,Wang Yanchun,Zhou Weiya,Gao Min,Xie Sishen

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2012/NR/C2NR30133D

Reference31 articles.

1. Technology and metrology of new electronic materials and devices

2. The missing memristor found

3. Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

5. Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

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