Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

Author:

Blasi Davide123ORCID,Viola Fabrizio4563ORCID,Modena Francesco45637,Luukkonen Axel891011ORCID,Macchia Eleonora12389ORCID,Picca Rosaria Anna1231213ORCID,Gounani Zahra891011,Tewari Amit891011,Österbacka Ronald891011,Caironi Mario4563ORCID,Kovacs Vajna Zsolt M.1415163,Scamarcio Gaetano171323,Torricelli Fabrizio1415163,Torsi Luisa12389ORCID

Affiliation:

1. CSGI (Centre for Colloid and Surface Science)

2. 70125 Bari

3. Italy

4. Center for Nano Science and Technology@PoliMi

5. Istituto Italiano di Tecnologia

6. 20133 Milan

7. Dipartimento di Elettronica, Infomazione e Bioingegneria

8. Faculty of Science and Engineering

9. Åbo Akademi University

10. 20500 Turku

11. Finland

12. Dipartimento di Chimica

13. Università degli Studi di Bari “Aldo Moro”

14. Dipartimento Ingegneria dell’Informazione

15. Università degli Studi di Brescia

16. 25123 Brescia

17. Dipartimento Interateneo di Fisica “M. Merlin”

Abstract

A large-area processable ink-jet-printed poly(3-hexylthiophene) electrolyte-gated field-effect transistor, designed for bioelectronic applications, is proven to be stable for one week of continuous operation.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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