Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging-Reference-Cited by-同舟云学术

Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging

Published:2023 Issue:7 Volume:15 Page:3520-3531
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Baoxiang¹,Gao Wei¹^ORCID,Li Hengyi¹,Gao Peng¹,Yang Mengmeng¹,Pan Yuan¹,Wang Chuanglei¹,Yang Yani¹,Huo Nengjie¹^ORCID,Zheng Zhaoqiang²^ORCID,Li Jingbo¹

Affiliation:

1. School of Semiconductor Science and Technology, Guangdong Provincial Key Laboratory of Chip and Integration Technology, South China Normal University, Guangzhou 528225, P. R. China

2. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China

Abstract

High-performance visible and near-infrared photodetection and single-pixel imaging can be achieved by our γ-InSe/Ge photodiode at zero bias. Meanwhile, a maximum polarization sensitivity of 3.01 is obtained under 635 nm among the broadband spectrum.

Funder

Guangzhou Municipal Science and Technology Project

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR06642D

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