Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction-Reference-Cited by-同舟云学术

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Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Published:2022 Issue:13 Volume:14 Page:5247-5247
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dzhigaev Dmitry¹,Svensson Johannes²,Krishnaraja Abinaya²,Zhu Zhongyunshen²,Ren Zhe¹,Liu Yi¹,Kalbfleisch Sebastian³,Björling Alexander³,Lenrick Filip¹,Balogh Zoltan Imre⁴,Hammarberg Susanna¹,Wallentin Jesper¹,Timm Rainer¹,Wernersson Lars-Erik²,Mikkelsen Anders¹

Affiliation:

1. Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

2. Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

3. MAX IV Laboratory, Lund University, 22100 Lund, Sweden

4. DTU CEN, DTU, Fysikvej 2800, Lyngby, Denmark

Abstract

Correction for ‘Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction’ by Dmitry Dzhigaev et al., Nanoscale, 2020, 12, 14487–14493, DOI: 10.1039/D0NR02260H.

Funder

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

VINNOVA

Svenska Forskningsrådet Formas

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR90060B

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