Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors
Author:
Affiliation:
1. Department of Physics and Astronomy
2. University of Louisville
3. Louisville
4. USA
5. Conn Center for Renewable Energy Research
Abstract
Phosphorene-based field effect transistors are fabricated and are shown to be highly sensitive gas and photodetectors. The sensing mechanism is explained using a Schottky barrier model at the phosphorene/metal contact interface.
Funder
Basic Energy Sciences
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP06547D
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