Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding-Reference-Cited by-同舟云学术

Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding

Published:2020 Issue:28 Volume:8 Page:9755-9762
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Miyazato Itsuki¹²³⁴⁵^ORCID,Hussain Tanveer⁶⁷⁸⁹,Takahashi Keisuke¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry

2. Faculty of Science

3. Hokkaido University

4. Sapporo

5. Japan

6. School of Molecular Sciences

7. The University of Western Australia

8. Perth

9. Australia

Abstract

The band gaps in boron nitride/phosphorene (h-BN/P) heterostructures are investigated by single-atom-embedding via first principles calculations. The modified heterostructures are potential optoelectronic materials with tunable band gaps.

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02371J

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