van der Waals integration of AZO/MoS2 ohmic junctions toward high-performance transparent 2D electronics-Reference-Cited by-同舟云学术

van der Waals integration of AZO/MoS2 ohmic junctions toward high-performance transparent 2D electronics

Author:

Guo Tao¹²³⁴^ORCID,Wu Hao⁵²³⁴,Chen Xue¹²³⁴,Tang Qi¹²³⁴,Wan Jiaxian¹²³⁴,Guo Quanbing¹²³⁴,Jia Shuangfeng¹²³⁴,Liu Chang¹²³⁴

Affiliation:

1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology

2. Wuhan University

3. Wuhan 430072

4. China

5. Hubei Nuclear Solid Physics Key Laboratory, and School of Physics and Technology

Abstract

An ideal AZO–MoS₂ ohmic junction has been achieved, which provides transparent transistors with excellent electrical performance.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference53 articles.

1. S. M. Sze , Physics of Semiconductor Devices , John Wiley & Sons , New Jersey , 1981

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