Effective band gap tuning by foreign metal doping in hybrid tin iodide perovskites-Reference-Cited by-同舟云学术

Effective band gap tuning by foreign metal doping in hybrid tin iodide perovskites

Published:2017 Issue:16 Volume:5 Page:4048-4052
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hasegawa Hiroyuki¹²³^ORCID,Kobayashi Keisuke⁴²⁵³,Takahashi Yukihiro¹²³⁴²,Harada Jun¹²³⁴²,Inabe Tamotsu¹²³⁴²^ORCID

Affiliation:

1. Faculty of Science

2. Hokkaido University

3. Japan

4. Graduate School of Chemical Science and Engineering

5. Sapporo 060-0810

Abstract

Band gap reduction down to 0.8 eV is observed in tin iodide-based hybrid perovskites as a result of bismuth doping. The band gap reduction originated because of lowering of the conduction band energies. In spite of the foreign metal doping, the number of carriers is not affected.

Funder

Core Research for Evolutional Science and Technology

Support Center for Advanced Telecommunications Technology Research Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00446J

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