Electrochemically deposited nanocrystalline InSb thin films and their electrical properties-Reference-Cited by-同舟云学术

Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

Published:2016 Issue:6 Volume:4 Page:1345-1350
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hnida K. E.¹²³⁴,Bäßler S.⁵⁶⁷⁸⁹,Mech J.¹¹⁰³⁴,Szaciłowski K.¹²³⁴,Socha R. P.¹¹¹²⁴,Gajewska M.¹²³⁴,Nielsch K.⁵⁶⁷⁸⁹,Przybylski M.¹²³⁴¹,Sulka G. D.¹³¹⁴¹⁵⁴

Affiliation:

1. AGH University of Science and Technology

2. Academic Centre for Materials and Nanotechnology

3. 30-059 Krakow

4. Poland

5. University of Hamburg

6. Multifunctional Nanostructures

7. Institute of Nanostructure and Solid State Physics

8. 20-355 Hamburg

9. Germany

10. Faculty of Non-Ferrous Metals

11. Jerzy Haber Institute of Catalysis and Surface Chemistry Polish Academy of Sciences

12. 30-239 Krakow

13. Jagiellonian University in Krakow

14. Department of Physical Chemistry and Electrochemistry

15. 30-060 Krakow

Abstract

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03656A

Reference35 articles.

1. Room temperature detection of NO2 using InSb nanowire

2. High Sensitivity InSb Hall Effect Biosensor Platform for DNA Detection and Biomolecular Recognition Using Functionalized Magnetic Nanobeads

3. High-sensitivity InSb thin-film micro-Hall sensor arrays for simultaneous multiple detection of magnetic beads for biomedical applications

4. Quantum well photoconductors in infrared detector technology

5. Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots

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