Ultrafast phase change and long durability of BN-incorporated GeSbTe-Reference-Cited by-同舟云学术

Ultrafast phase change and long durability of BN-incorporated GeSbTe

Published:2015 Issue:8 Volume:3 Page:1707-1715
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jang Moon Hyung¹²³⁴,Park Seung Jong¹²³⁴,Ahn Min¹²³⁴,Jeong Kwang Sik¹²³⁴,Park Sung Jin¹²³⁴,Cho Mann-Ho¹²³⁴,Song Jae Yong⁵⁶⁷⁴,Jeong Hongsik¹²³⁴

Affiliation:

1. Institute of Physics and Applied Physics

2. Yonsei University

3. Seoul 120-749

4. Republic of Korea

5. Center for Nanocharacterization

6. Korea Research Institute of Standards and Science

7. Daejeon

Abstract

BN-incorporated amorphous Ge₂Sb₂Te₅ (GST) films were deposited by an ion beam sputtering deposition method. The power-time-effect (PTE) diagrams showed that as the amount of BN increased, the crystallization temperature and phase change speed increased.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02455A

Reference35 articles.

1. Solution-phase deposition and nanopatterning of GeSbSe phase-change materials

2. Designing optical media of the future

3. Around the phase-change cycle

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