Synthesis of large-area uniform Si2Te3 thin films for p-type electronic devices-Reference-Cited by-同舟云学术

Synthesis of large-area uniform Si2Te3 thin films for p-type electronic devices

Published:2020 Issue:20 Volume:12 Page:11242-11250
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Song Xuefen¹²³⁴,Ke Yuxuan¹²³⁴,Chen Xiaosong¹²³⁴,Liu Jidong¹²³⁴,Hao Qiaoyan¹²³⁴,Wei Dacheng⁵⁶⁷⁸^ORCID,Zhang Wenjing¹²³⁴^ORCID

Affiliation:

1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education

2. Shenzhen University

3. Shenzhen 518060

4. P. R. China

5. State Key Laboratory of Molecular Engineering of Polymers

6. Fudan University

7. Shanghai 200433

8. China

Abstract

Large area Si₂Te₃ thin films are prepared using CVD technique. The films thickness is controlled by the substrate temperature, which in turn regulates the film bandgap. Bottom-gate FETs demonstrate the p-type transport characteristics of Si₂Te₃.

Funder

National Natural Science Foundation of China

Shenzhen Peacock Plan

Department of Education of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR01730B

Reference44 articles.

1. Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes