New insights on the nature of impurity levels in V-doped In2S3: why is it impossible to obtain a metallic intermediate band?-Reference-Cited by-同舟云学术

New insights on the nature of impurity levels in V-doped In2S3: why is it impossible to obtain a metallic intermediate band?

Published:2019 Issue:13 Volume:7 Page:7745-7751
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ghorbani Elaheh¹²³⁴⁵^ORCID,Erhart Paul⁶⁷⁸⁹^ORCID,Albe Karsten¹²³⁴⁵^ORCID

Affiliation:

1. Fachgebiet Materialmodellierung

2. Institut für Materialwissenschaft

3. TU Darmstadt

4. D-64287 Darmstadt

5. Germany

6. Department of Physics

7. Chalmers University of Technology

8. SE-412 96 Gothenburg

9. Sweden

Abstract

We have studied all possible oxidation states of vanadium in In₂S₃ and found that creation of a metallic intermediate band inside the band gap of vanadium doped In₂S₃ is not possible.

Funder

Bundesministerium für Wirtschaft und Energie

Knut och Alice Wallenbergs Stiftelse

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C9TA01629E

Reference38 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Towards the intermediate band

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4. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

5. Ab initioelectronic structure calculations for metallic intermediate band formation in photovoltaic materials

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