Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor-Reference-Cited by-同舟云学术

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Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor

Published:2018 Issue:23 Volume:6 Page:6264-6269
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Hyunkyu¹²³⁴,Jang Dongsoo¹²³⁴,Kim Donghoi¹²³⁴,Kim Hwa Seob¹²³⁴,Kim Chinkyo¹²³⁴^ORCID

Affiliation:

1. Department of Physics and Research Institute for Basic Sciences

2. Kyung Hee University

3. Seoul

4. Korea

Abstract

HCl-vapor etching can provide another degree of freedom in polarity-sensitive etching because TD-free N-polar GaN is inert to HCl vapor.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01640B

Reference16 articles.

1. Wet etching of GaN, AlN, and SiC: a review

2. Characterization of threading dislocations in GaN epitaxial layers

3. Threading Dislocations and Optical Properties of GaN and GaInN

4. Determination of dislocation density in epitaxially grown GaN using an HCl etching process

5. Influence of polarity on GaN thermal stability

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thru‐Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth;Advanced Materials Interfaces;2022-12

2. A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO2-Patterned Sapphire Substrate;Crystal Growth & Design;2020-07-31

3. Non-edge-triggered inversion from Ga polarity to N polarity of c-GaN domains on an SiO2 mask during epitaxial lateral overgrowth;Journal of Applied Crystallography;2019-04-18

4. Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga to N polarity at a mask pattern boundary;Journal of Applied Crystallography;2018-10-25

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