Influence of the defect density on the ordering of an NHC monolayer on a silicon surface-Reference-Cited by-同舟云学术

Influence of the defect density on the ordering of an NHC monolayer on a silicon surface

Published:2023 Issue:22 Volume:11 Page:7377-7382
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zielinski Robert¹^ORCID,Das Mowpriya²,Kosbab Canan¹,Nehring Mike Thomas¹,Dähne Mario¹,Esser Norbert¹³,Franz Martin¹^ORCID,Glorius Frank²^ORCID

Affiliation:

1. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstrasse 36, 10623 Berlin, Germany

2. Westfälische Wilhelms-Universität Münster, Organisch-Chemisches Institut, Corrensstrasse 40, 48149 Münster, Germany

3. Leibniz-Institut für Analytische Wissenschaften – ISAS e.V., Schwarzschildstrasse 8, 12489 Berlin, Germany

Abstract

We demonstrate the formation of highly ordered cyCAAC monolayers on silicon showing strong work function reductions. The grade of ordering thereby strongly depends on the surface defect density revealing an initial adsorption on defects.

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00681F

Reference48 articles.

1. Surface Chemistry of Silicon

2. Formation and Characterization of Organic Monolayers on Semiconductor Surfaces

3. Reversible Self‐Assembly of an N‐Heterocyclic Carbene on Metal Surfaces

4. Growth of N‐Heterocyclic Carbene Assemblies on Cu(100) and Cu(111): From Single Molecules to Magic‐Number Islands

5. Self-Assembled Monolayers of Thiolates on Metals as a Form of Nanotechnology

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