Scalable high-mobility MoS2thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature-Reference-Cited by-同舟云学术

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Scalable high-mobility MoS2thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

Published:2014-09-04 Issue:21 Volume:6 Page:12792-12797
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Huang Chung-Che,Al-Saab Feras,Wang Yudong,Ou Jun-Yu,Walker John C.,Wang Shuncai,Gholipour Behrad,Simpson Robert E.,Hewak Daniel W.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR04228J

Reference25 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

3. Van der Waals heterostructures

4. Single-layer MoS2 transistors

5. Emerging Photoluminescence in Monolayer MoS2

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1. Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides;physica status solidi (a);2024-03-09

2. Scalable Large-Area 2D-MoS₂/Silicon-Nanowire Heterostructures for Enhancing Energy Storage Applications;ACS Applied Energy Materials;2024-03-07

3. Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS₂ Transistors;Advanced Electronic Materials;2024-03-05

4. Synergistic Approach for Controlled Doping in a MoS₂ Monolayer for Enhanced NH₃ Sensing;ACS Applied Nano Materials;2024-02-07

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