Modulation of the electronic property of hydrogenated 2D tetragonal Ge by applying external strain-Reference-Cited by-同舟云学术

Modulation of the electronic property of hydrogenated 2D tetragonal Ge by applying external strain

Published:2019 Issue:40 Volume:9 Page:23142-23147
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu Chunyan¹²³⁴⁵^ORCID,Zhang Jing¹²³⁴⁵,Guo Ming¹²³⁴⁵,Wang Lingrui⁶⁷⁸⁹¹⁰

Affiliation:

1. Jilin Engineering Laboratory for Quantum Information Technology

2. Institute for Interdisciplinary Quantum Information Technology

3. Jilin Engineering Normal University

4. Changchun 130052

5. People's Republic of China

6. Key Laboratory of Materials Physics of Ministry of Education

7. Department of Physics and Engineering

8. Zhengzhou University

9. Zhengzhou 450052

10. China

Abstract

α- and β-GeH are semiconductors with direct band gap of 0.953 eV and indirect gap of 2.616 eV, respectively. Direct band gap of α-GeH reduces from 2.008 to 0.036 eV as strain increase from −7 to 7%, indirect band gap of β-GeH is changed slightly.

Funder

China Postdoctoral Science Foundation

Zhengzhou University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA04655K

Reference34 articles.

1. The rise of graphene

2. Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)