Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii)-Reference-Cited by-同舟云学术

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Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii)

Published:2019 Issue:37 Volume:11 Page:17201-17205
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Yaqi¹²³⁴,Zhang Jingwei¹²³⁴,Yin Fanxing¹²³⁴,Wang Yuqing¹²³⁴,Feng Haifeng¹²³⁴⁵^ORCID,Zhou Si⁶⁷⁸⁹¹⁰,Du Yi¹²³⁴⁵^ORCID

Affiliation:

1. School of Physics

2. Beihang University

3. Beijing 100191

4. P. R. China

5. BUAA-UOW Joint Research Centre

6. Institute for Superconducting and Electronic Materials (ISEM)

7. Australian Institute for Innovative Materials (AIIM)

8. University of Wollongong

9. Wollongong

10. Australia

Abstract

Ultra-thin β-Ga(110) and high-pressure phase Ga(iii) nanoislands were synthesized on Si(111).

Funder

Beihang University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05597E

Reference26 articles.

1. États métastables du gallium. Surfusion et polymorphisme

2. Crystal structures of Ga(II) and Ga(III)

3. High-pressure bct-fcc phase transition in Ga

4. Stretchable and Soft Electronics using Liquid Metals

5. An autonomously electrically self-healing liquid metal–elastomer composite for robust soft-matter robotics and electronics

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1. Epitaxial growth of ultrathin gallium films on Cd(0001);Chinese Physics B;2024-01-01

2. Two-Dimensional Metal Nanostructures: From Theoretical Understanding to Experiment;Chemical Reviews;2023-02-20

3. Few-monolayer Ga film on Si(111): illusive gallenene formation and localization instead of superconductivity;Molecular Systems Design & Engineering;2023

4. Stability and electronic properties of gallenene;Nanoscale Advances;2022

5. Gallenene;Xenes;2022

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