Optimization of a triazine-based acceptor (CN-T2T) as the electron transport layer for highly efficient near-infrared perovskite light-emitting diodes

Author:

Kurniawan Ade12,Lee Chih-Chien1,Iskandar Johan12ORCID,Liu Chih-Yi2,Pal Bhola Nath23,Cheng Hsin-Ming4,Liu Shun-Wei52ORCID,Biring Sajal52ORCID

Affiliation:

1. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei City 106335, Taiwan

2. Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan

3. School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India

4. Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan

5. Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan

Abstract

High EQE of 18.01% and radiance of 366.76 W sr−1 m−2 were achieved by simply controlling the thickness of uncommon exciplex electron acceptor 3′,3′′′,3′′′′′-(1,3,5-triazine-2,4,6-triyl) tris(([1,1′-biphenyl]-3-carbonitrile)) (CN-T2T) as alternate electron transport layer for MAPbI3 perovskite LED.

Funder

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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