Computational investigations of the metal/semiconductor NbS<sub>2</sub>/boron phosphide van der Waals heterostructure: effects of an electric field-Reference-Cited by-同舟云学术

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Computational investigations of the metal/semiconductor NbS₂/boron phosphide van der Waals heterostructure: effects of an electric field

Published:2024 Issue:31 Volume:53 Page:13022-13029
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Vinh Nguyen V.¹,Nguyen Son-Tung²,Pham Khang D.³⁴^ORCID

Affiliation:

1. Faculty of Information Technology, Ho Chi Minh City University of Economics and Finance, Ho Chi Minh City, Vietnam

2. Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam

3. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

4. School of Engineering & Technology, Duy Tan University, Da Nang 550000, Vietnam

Abstract

In this work, we design computationally the metal–semiconductor NbS2/BP heterostructure and investigate its atomic structure, electronic properties and contact barrier using first-principles prediction.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/DT/D4DT01454E

Reference59 articles.

1. An atlas of two-dimensional materials

2. Graphene-Like Two-Dimensional Materials

3. Electronics based on two-dimensional materials

4. Negative piezoelectricity and enhanced electrical conductivity at the interfaces of two-dimensional dialkali oxide and chalcogenide monolayers

5. Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

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