Developing D–π–D hole-transport materials for perovskite solar cells: the effect of the π-bridge on device performance-Reference-Cited by-同舟云学术

Developing D–π–D hole-transport materials for perovskite solar cells: the effect of the π-bridge on device performance

Published:2021 Issue:2 Volume:5 Page:876-884
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Ou Yangmei¹²³⁴⁵,Sun Anxin¹²³⁴⁵,Li Haibei⁶⁷⁸⁵^ORCID,Wu Tai¹²³⁴⁵,Zhang Dongyang¹²³⁴⁵,Xu Peng¹²³⁴⁵,Zhao Rongmei¹²³⁴⁵,Zhu Liqiong¹²³⁴⁵,Wang Runtao¹²³⁴⁵,Xu Bo⁹¹⁰¹¹^ORCID,Hua Yong¹²³⁴⁵^ORCID,Ding Liming¹²¹³¹⁴¹⁵⁵^ORCID

Affiliation:

1. Yunnan Key Laboratory for Micro/Nano Materials & Technology

2. School of Materials and Energy

3. Yunnan University

4. Kunming 650091

5. China

6. School of Ocean

7. Shandong University

8. Weihai 264209

9. School of Chemistry

10. KTH-Royal Institute of Technology

11. Sweden

12. Center for Excellence in Nanoscience (CAS)

13. Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS)

14. National Center for Nanoscience and Technology

15. Beijing 100190

Abstract

Three cost-effective D–π–D hole-transport materials were synthesized for use in perovskite solar cells. The (FAPbI₃)_0.85(MAPbBr₃)_0.15 and CsPbI₂Br solar cells with SY3 gave PCEs of 19.08% and 13.41%, respectively.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Yunnan Province

Yunnan University

National Key Research and Development Program of China

Shandong University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/QM/D0QM00719F