Strain-mediated multistate skyrmion for neuron devices

Author:

Shi Shengbin1ORCID,Zhao Yunhong2ORCID,Sun Jiajun1ORCID,Yu Guoliang3ORCID,Zhou Haomiao3ORCID,Wang Jie124ORCID

Affiliation:

1. Department of Engineering Mechanics, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027, China

2. Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China

3. Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering, China Jiliang University, Hangzhou 310018, People's Republic of China

4. Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027, China

Abstract

A novel way to realized the energy-feeicient and high-density neuromorphic computing: Our work proposed a compact IF spiking neuron device by controlling the modalities of skyrmion using voltage-induced strain in multilayer heterostructure.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

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