Electric field induced electronic properties modification of ZrS2/HfS2 van der Waals heterostructure-Reference-Cited by-同舟云学术

Electric field induced electronic properties modification of ZrS2/HfS2 van der Waals heterostructure

Published:2017 Issue:24 Volume:7 Page:14625-14630
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Shang Jimin¹²³⁴⁵^ORCID,Zhang Shuai⁶⁷⁸⁴,Cheng Xuerui¹²³⁴,Wei Zhongming⁵⁹¹⁰¹¹¹²^ORCID,Li Jingbo⁵⁹¹⁰¹¹¹²

Affiliation:

1. School of Physics and Electronics Engineering

2. Zhengzhou University of Light Industry

3. Zhengzhou 453002

4. China

5. State Key Laboratory for Superlattices and Microstructures

6. College of Physics and Engineering

7. Henan University of Science and Technology

8. Luoyang 471023

9. Institute of Semiconductors

10. University of Chinese Academy of Sciences

11. Chinese Academy of Sciences

12. Beijing 100083

Abstract

By using first-principles calculations, we investigate the electronic properties of a ZrS₂/HfS₂ heterostructure modulated by an external electric field.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C6RA28383G

Reference26 articles.

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