Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator-Reference-Cited by-同舟云学术

Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

Published:2020 Issue:16 Volume:8 Page:5535-5540
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Anwar Saleem¹²³⁴⁵,Jeong Beomjin¹²³,Abolhasani Mohammad Mahdi¹²³⁶⁷,Zajaczkowski Wojciech¹²³,Hassanpour Amiri Morteza¹²³,Asadi Kamal¹²³^ORCID

Affiliation:

1. Max Planck Institute for Polymer Research

2. 55128 Mainz

3. Germany

4. School of Chemical & Materials Engineering

5. National University of Sciences & Technology

6. Chemical Engineering Department

7. University of Kashan

Abstract

Ultra-smooth thin-films of nylons, one of the most successful commercialized polymers, have been realized for the application in ferroelectric field effect transistors.

Funder

Alexander von Humboldt-Stiftung

National University of Sciences and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06868F

Reference31 articles.

1. Organic Nonvolatile Memory Devices Based on Ferroelectricity

2. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

3. Organic ferroelectric opto-electronic memories

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. Multilevel Information Storage in Ferroelectric Polymer Memories

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