Gate bias modulation towards organic electrochemical transistors with ultra-high cycling stability-Reference-Cited by-同舟云学术

Gate bias modulation towards organic electrochemical transistors with ultra-high cycling stability

Published:2024 Issue:26 Volume:12 Page:15753-15761
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Xie Miao¹,Lai Yueping²,Li Meisi³,Zhao Dan¹,Huang Chenggeng¹,Bai Libing¹,Cheng Yuhua¹,Chen Jianhua³,Feng Liang-Wen²,Huang Wei¹^ORCID

Affiliation:

1. School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

2. Key Laboratory of Green Chemistry & Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu 610065, P. R. China

3. School of Chemical Science and Technology, Yunnan University, Kunming 650091, P. R. China

Abstract

The combination of appropriate gate bias and innovative structure design can significantly enhance the cycling stability of organic electrochemical transistors, which is crucial for controllable and extended lifetime of functional bioelectronics.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Aeronautical Science Foundation of China

Chengdu Science and Technology Bureau

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA02276A

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