Robustness of the electronic structure and charge transfer in topological insulator Bi2Te2Se and Bi2Se2Te thin films under an external electric field
Author:
Affiliation:
1. Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
2. College of Physics and Energy
3. Fujian Normal University
4. Fuzhou 350117
5. China
Abstract
The electronic structure and charge transfer of Bi2Te2Se and Bi2Se2Te thin films are robust to an external electrical field.
Funder
Natural Science Foundation of Fujian Province
National Natural Science Foundation of China
Fujian Normal University
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP06206H
Reference73 articles.
1. Topological Insulators in Three Dimensions
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4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
5. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
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