Bi2OS2: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states-Reference-Cited by-同舟云学术

Bi2OS2: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states

Published:2018 Issue:6 Volume:5 Page:1058-1064
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zhang Xiwen¹²³⁴,Wang Bing⁵²³⁴,Niu Xianghong⁶⁷⁸⁴,Li Yunhai⁵²³⁴,Chen Yunfei⁹²³⁴,Wang Jinlan⁵²³⁴^ORCID

Affiliation:

1. School of Mechanism Engineering & School of Physics

2. Southeast University

3. Nanjing 211189

4. China

5. School of Physics

6. School of Science

7. Nanjing University of Posts and Telecommunications

8. Nanjing 210046

9. School of Mechanism Engineering

Abstract

Bi₂OS₂ nanosheets possess tunable anomalous layer-dependent bandgaps, derived from the synergetic effect of the quantum confinement and surface electron states.

Funder

National Natural Science Foundation of China

Southeast University

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/MH/C8MH01001C

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