Optoelectronic characteristics of a near infrared light photodetector based on a topological insulator Sb2Te3 film-Reference-Cited by-同舟云学术

Optoelectronic characteristics of a near infrared light photodetector based on a topological insulator Sb2Te3 film

Published:2015 Issue:35 Volume:3 Page:9154-9160
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Kun¹²³⁴,Luo Lin-Bao¹²³⁴,Zhang Teng-Fei¹²³⁴,Liu Yu-Hung⁵⁶⁷⁸⁹,Yu Yong-Qiang¹²³⁴,Lu Rui¹²³⁴,Qiu Huai-Li⁵⁶⁷⁸,Li Zhong-Jun⁵⁶⁷⁸,Andrew Huang J. C.⁵⁶⁷⁸⁹

Affiliation:

1. School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Materials and Devices

2. Hefei University of Technology

3. Hefei

4. P. R. China

5. Department of Physics

6. National Cheng Kung University

7. Tainan 701

8. Taiwan

9. Taiwan Consortium of Emergent Crystalline Materials

Abstract

In this study, we present a photodetector based on a topological insulator Sb₂Te₃ thin film, which shows an obvious photoresponse to near infrared light with good responsivity, photoconductive gain and detectivity.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01772F

Reference38 articles.

1. Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE

2. Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry

3. Atomically smooth ultrathin films of topological insulator Sb2Te3