Improving crystal quality of Er-doped Gd2O3 grown on a Si(111) substrate by inserting a bifunctional GdOx layer-Reference-Cited by-同舟云学术

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Improving crystal quality of Er-doped Gd₂O₃ grown on a Si(111) substrate by inserting a bifunctional GdO_x layer

Published:2024 Issue:31 Volume:26 Page:4190-4194
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Inaba T.¹^ORCID,Xu X.¹^ORCID,Omi H.²,Yamamoto H.¹^ORCID,Tawara T.³^ORCID,Sanada H.¹^ORCID

Affiliation:

1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

2. Faculty of Science and Engineering, Yamato University, Suita, Osaka 564-0082, Japan

3. College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan

Abstract

The bifunctional GdOx layer prepared by the thermally induced redox reaction between Gd metal and a SiOx layer improves the crystallinity and optical properties of Er-doped Gd2O3 grown on a Si(111) substrate.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00226A

Reference37 articles.

1. Silicon photonics for next generation system integration platform

2. Integrating silicon photonics

3. Roadmap on silicon photonics

4. A Roadmap for Integrated Photonics

5. C.Ramey , 2020 IEEE Hot Chips 32 Symposium (HCS) , Palo Alto, CA, U.S.A. , 2020 , p. 1

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