Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth-Reference-Cited by-同舟云学术

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

Published:2022 Issue:3 Volume:51 Page:803-811
ISSN:0306-0012
Container-title:Chemical Society Reviews
language:en
Short-container-title:Chem. Soc. Rev.

Author:

Wan Yi¹²,Fu Jui-Han³,Chuu Chih-Piao⁴,Tung Vincent³,Shi Yumeng¹⁵^ORCID,Li Lain-Jong²^ORCID

Affiliation:

1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

2. Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong

3. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia

4. Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), 168 Park Ave. 2, Hsinchu Science Park, Hsinchu 30075, Taiwan

5. Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

Abstract

We provide a systematic summary of the critical factors—including crystal/substrate symmetry and energy consideration—necessary for synthesizing single-orientation 2D layers.

Funder

National Natural Science Foundation of China

Shenzhen Peacock Plan

King Abdullah University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CS/D1CS00264C

Reference48 articles.

1. Surface States and Rectification at a Metal Semi-Conductor Contact