Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition-Reference-Cited by-同舟云学术

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Published:2018 Issue:13 Volume:20 Page:1774-1778
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Hasegawa Kei¹²³⁴^ORCID,Takazawa Chiaki⁵²³⁴,Fujita Makoto⁶⁷³⁴,Noda Suguru⁶⁷³⁴^ORCID,Ihara Manabu¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemical Science and Engineering

2. Tokyo Institute of Technology

3. Tokyo

4. Japan

5. Department of Chemistry

6. Department of Applied Chemistry

7. Waseda University

Abstract

Monocrystalline, low defect Si thin films fabricated via 1-minute vapor deposition on a double porous layer treated by zone heating recrystallization.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C7CE02162C

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2. IRENA , The Power to Change: Solar and Wind Cost Reduction Potential to 2025 , 2016

3. Transfer Printing Methods for Flexible Thin Film Solar Cells: Basic Concepts and Working Principles

4. Development of high-efficiency thin-film Si solar cells using zone-melting recrystallization

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