Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Author:

Wang Heng12345,Cao Xianlong6789,Takagiwa Yoshiki10111213,Snyder G. Jeffrey123414

Affiliation:

1. Materials Science

2. California Institute of Technology

3. Pasadena

4. USA

5. Materials Science and Engineering

6. Department of Metallurgy and Materials Engineering

7. Chongqing University of Science and Technology

8. Chongqing 401331

9. China

10. Department of Advanced Materials Science

11. The University of Tokyo

12. Kashiwa-shi

13. Japan

14. ITMO University

Abstract

Dopants are not the same in heavily doped semiconductors. For higher mobility dopants should be on the anion site for n-type and the cation site for p-type semiconductors, as these dopants are less disruptive to the band for the majority charge carriers.

Funder

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

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