A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates-Reference-Cited by-同舟云学术

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe2/n-WS2 heterojunction diode on SiO2 and h-BN substrates

Published:2021 Issue:29 Volume:11 Page:17901-17909
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sharma Pradeep Raj¹²³⁴,Gautam Praveen¹²³⁴,Afzal Amir Muhammad⁵⁶⁷⁴,Park Byoungchoo⁵⁶⁷⁴^ORCID,Noh Hwayong¹²³⁴^ORCID

Affiliation:

1. Department of Physics and Astronomy

2. Sejong University

3. Seoul 05006

4. Republic of Korea

5. Department of Electrical and Biological Physics

6. Kwangwoon University

7. Seoul 01897

Abstract

A few-layer WSe₂/WS₂ heterojunction diode on an h-BN substrate shows improved electronic and optoelectronic characteristics with a robust diode rectification ratio and photo responsivity compared to that on a SiO₂ substrate.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA01231B

Reference64 articles.

1. The electronic properties of graphene

2. The electronic properties of graphene and carbon nanotubes

3. Graphene photonics and optoelectronics

4. Graphene Plasmonics: A Platform for Strong Light–Matter Interactions

5. Electronic spin transport and spin precession in single graphene layers at room temperature

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