Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor-Reference-Cited by-同舟云学术

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Air-stable n-channel organic field-effect transistors based on a sulfur rich π-electron acceptor

Published:2015 Issue:15 Volume:3 Page:3569-3573
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Filatre-Furcate Agathe¹²³⁴⁵,Higashino Toshiki¹²³⁴,Lorcy Dominique⁵⁶⁷⁸⁹,Mori Takehiko¹²³⁴

Affiliation:

1. Department of Organic and Polymeric Materials

2. Tokyo Institute of Technology

3. Meguro-ku

4. Japan

5. Institut des Sciences Chimiques de Rennes

6. Université de Rennes 1

7. CNRS UMR 6226

8. Matière Condensée et Systèmes Electroactifs (MaCSE)

9. 35042 Rennes cedex

Abstract

The single-crystal transistor of the sulfur rich π-electron acceptor has exhibited air-stable electron mobility as high as 0.22 cm² V⁻¹ s⁻¹.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00253B

Reference52 articles.

1. Organic Thin Film Transistors for Large Area Electronics

2. Z. Bao and J.Locklin, Organic Field-Effect Transistors, CRC Press, New-York, 2007

3. Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics

4. Organic Semiconducting Oligomers for Use in Thin Film Transistors

5. Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors

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