Free-standing 2D non-van der Waals antiferromagnetic hexagonal FeSe semiconductor: halide-assisted chemical synthesis and Fe2+ related magnetic transitions

Author:

Xu Junjie1,Li Wei1,Zhang Biao1,Zha Liang2,Hao Wei3ORCID,Hu Shixin4,Yang Jinbo2,Li ShuZhou3ORCID,Gao Song56ORCID,Hou Yanglong1ORCID

Affiliation:

1. Beijing Key Laboratory of Magnetoelectric Materials and Devices, School of Materials Science and Engineering, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing 100871, China

2. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

3. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

4. Institute of Applied Magnetics, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China

5. Beijing Key Laboratory for Magnetoelectric Materials and Devices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

6. Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou 511442, China

Abstract

Free-standing two-dimensional non-layered hexagonal FeSe with intrinsic antiferromagnetic and semiconducting nature has been achieved by a wet-chemical method. The chemical environment change of Fe2+ would induce the magnetic transition of FeSe.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

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